Invention Grant
- Patent Title: Method for forming a semiconductor device
- Patent Title (中): 半导体器件形成方法
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Application No.: US14920379Application Date: 2015-10-22
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Publication No.: US09558933B2Publication Date: 2017-01-31
- Inventor: Hans-Joachim Schulze , Markus Zundel , Anton Mauder , Andreas Meiser , Franz Hirler , Hans Weber
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L21/425
- IPC: H01L21/425 ; H01L21/02 ; H01L21/265 ; H01L21/321 ; H01L29/66
Abstract:
A method for forming a semiconductor device includes carrying out an anodic oxidation of a surface region of a semiconductor substrate to form an oxide layer at a surface of the semiconductor substrate by generating an attracting electrical field between the semiconductor substrate and an external electrode within an electrolyte to attract oxidizing ions of the electrolyte, causing an oxidation of the surface region of the semiconductor substrate. Further, the method includes reducing the number of remaining oxidizing ions within the oxide layer, while the semiconductor substrate is within an electrolyte.
Public/Granted literature
- US20160049296A1 METHOD FOR FORMING A SEMICONDUCTOR DEVICE Public/Granted day:2016-02-18
Information query
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