Invention Grant
- Patent Title: Method for postdoping a semiconductor wafer
- Patent Title (中): 后掺杂半导体晶片的方法
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Application No.: US14963855Application Date: 2015-12-09
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Publication No.: US09559020B2Publication Date: 2017-01-31
- Inventor: Reinhard Ploss , Helmut Oefner , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Associates, LLC
- Priority: DE102013216195 20130814
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L21/66 ; H01L21/265 ; H01L21/324 ; H01L21/261 ; H01L21/263 ; H01L29/36 ; H01L29/66 ; H01L29/78 ; H01L29/32 ; H01L29/739 ; H01L29/74 ; H01L29/861 ; H01L29/872
Abstract:
A method for treating a semiconductor wafer having a basic doping is disclosed. The method includes determining a doping concentration of the basic doping, and adapting the basic doping of the semiconductor wafer by postdoping. The postdoping includes at least one of the following methods: a proton implantation and a subsequent thermal process for producing hydrogen induced donors. In this case, at least one of the following parameters is dependent on the determined doping concentration of the basic doping: an implantation dose of the proton implantation, and a temperature of the thermal process.
Public/Granted literature
- US20160099186A1 METHOD FOR POSTDOPING A SEMICONDUCTOR WAFER Public/Granted day:2016-04-07
Information query
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