Invention Grant
- Patent Title: Semiconductor arrangement with active drift zone
- Patent Title (中): 具有主动漂移区的半导体装置
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Application No.: US14372323Application Date: 2013-01-30
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Publication No.: US09559089B2Publication Date: 2017-01-31
- Inventor: Rolf Weis
- Applicant: Infineon Technologies Dresden GmbH
- Applicant Address: DE Dresden
- Assignee: Infineon Technologies Dresden GmbH
- Current Assignee: Infineon Technologies Dresden GmbH
- Current Assignee Address: DE Dresden
- Agency: Murphy, Bilak & Homiller, PLLC
- International Application: PCT/EP2013/051824 WO 20130130
- International Announcement: WO2013/113770 WO 20130808
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L27/02 ; H01L21/84 ; H01L27/06 ; H01L27/088 ; H01L27/12 ; H01L27/105 ; H01L29/06 ; H01L29/40

Abstract:
A semiconductor device arrangement includes a semiconductor layer and at least one series circuit with a first semiconductor device and a plurality of n second semiconductor devices, with n>1. The first semiconductor device has a load path and active device regions integrated in the semiconductor layer. Each second semiconductor device has active device regions integrated in the semiconductor layer and a load path between a first and second load terminal and a control terminal. The second semiconductor devices have their load paths connected in series and connected in series to the load path of the first semiconductor device. Each second semiconductor device has its control terminal connected to the load terminal of one of the other second semiconductor devices. One of the second semiconductor devices has its control terminal connected to one of the load terminals of the first semiconductor device. The arrangement further includes an edge termination structure.
Public/Granted literature
- US20150001624A1 Semiconductor Arrangement with Active Drift Zone Public/Granted day:2015-01-01
Information query
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