Invention Grant
US09559101B2 Semiconductor device with impurity-doped region and method of fabricating the same
有权
具有杂质掺杂区域的半导体器件及其制造方法
- Patent Title: Semiconductor device with impurity-doped region and method of fabricating the same
- Patent Title (中): 具有杂质掺杂区域的半导体器件及其制造方法
-
Application No.: US13803799Application Date: 2013-03-14
-
Publication No.: US09559101B2Publication Date: 2017-01-31
- Inventor: Hidenobu Fukutome
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2012-0067493 20120622
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L27/092 ; G11C11/40 ; H01L21/8238
Abstract:
A semiconductor device includes an interlayer insulating film formed on a substrate, a plurality of contacts formed in the interlayer insulating film, and an impurity-doped region formed around the contacts in the interlayer insulating film and along a lengthwise direction of the contacts.
Public/Granted literature
- US20130343121A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2013-12-26
Information query
IPC分类:
