Invention Grant
- Patent Title: Dense arrays and charge storage devices
- Patent Title (中): 密集阵列和电荷存储设备
-
Application No.: US14856131Application Date: 2015-09-16
-
Publication No.: US09559110B2Publication Date: 2017-01-31
- Inventor: Thomas H. Lee
- Applicant: SANDISK 3D LLC
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Plano
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L27/115 ; G11C16/34 ; H01L21/822 ; H01L27/06 ; H01L27/112 ; H01L29/423 ; H01L29/66 ; H01L29/788 ; H01L29/792 ; H01L29/861 ; H01L29/16 ; G11C16/10 ; G11C16/14 ; G11C16/26 ; H01L29/06 ; H01L29/51 ; H01L27/12
Abstract:
There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive levels is planarized by chemical mechanical polishing.
Public/Granted literature
- US20160079258A1 DENSE ARRAYS AND CHARGE STORAGE DEVICES Public/Granted day:2016-03-17
Information query
IPC分类:
