Invention Grant
- Patent Title: Thin film transistor substrate and display
- Patent Title (中): 薄膜晶体管基板和显示屏
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Application No.: US15019853Application Date: 2016-02-09
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Publication No.: US09559122B2Publication Date: 2017-01-31
- Inventor: Kuan-Feng Lee
- Applicant: INNOLUX CORPORATION
- Applicant Address: TW Jhu-Nan
- Assignee: INNOLUX CORPORATION
- Current Assignee: INNOLUX CORPORATION
- Current Assignee Address: TW Jhu-Nan
- Agency: Liu & Liu
- Priority: TW101120063A 20120605
- Main IPC: H01L35/24
- IPC: H01L35/24 ; H01L51/00 ; H01L29/04 ; H01L31/036 ; H01L31/0376 ; H01L31/20 ; H01L29/76 ; H01L31/112 ; G02F1/136 ; H01L27/12 ; H01L29/786 ; H01L29/49 ; H01L21/02 ; H01L27/32 ; H01L29/417 ; G02F1/1368

Abstract:
The invention provides a thin film transistor substrate includes: a substrate; and a plurality of transistors, wherein each of the transistors includes a gate electrode disposed on the substrate; a first diffusion barrier layer disposed on the substrate and covering an upper surface and a ring sidewall of the gate electrode; a gate insulating layer disposed on the first diffusion barrier layer; an active layer disposed on the gate insulating layer and over the gate electrode; a source electrode disposed on the substrate and electrically connected to the active layer; a drain electrode disposed on the substrate and electrically connected to the active layer; and a protective layer covering the source electrode and the drain electrode.
Public/Granted literature
- US20160172384A1 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY Public/Granted day:2016-06-16
Information query
IPC分类: