Invention Grant
- Patent Title: Semiconductor device having antenna and method for manufacturing thereof
- Patent Title (中): 具有天线的半导体器件及其制造方法
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Application No.: US13468354Application Date: 2012-05-10
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Publication No.: US09559129B2Publication Date: 2017-01-31
- Inventor: Kyosuke Ito , Junya Maruyama , Takuya Tsurume , Shunpei Yamazaki
- Applicant: Kyosuke Ito , Junya Maruyama , Takuya Tsurume , Shunpei Yamazaki
- Applicant Address: JP Kanagawa-ken
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2004-304856 20041019
- Main IPC: H01L27/13
- IPC: H01L27/13 ; G06K19/077 ; H01Q1/22 ; H01Q7/00 ; H01L27/12

Abstract:
The present invention provides an antenna in that the adhesive intensity of a conductive body formed on a base film is increased, and a semiconductor device including the antenna. The invention further provides a semiconductor device with high reliability that is formed by attaching an element formation layer and an antenna, wherein the element formation layer is not damaged due to a structure of the antenna. The semiconductor device includes the element formation layer provided over a substrate and the antenna provided over the element formation layer. The element formation layer and the antenna are electrically connected. The antenna has a base film and a conductive body, wherein at least a part of the conductive body is embedded in the base film. As a method for embedding the conductive body in the base film, a depression is formed in the base film and the conductive body is formed therein.
Public/Granted literature
- US20120241924A1 SEMICONDUCTOR DEVICE HAVING ANTENNA AND METHOD FOR MANUFACTURING THEREOF Public/Granted day:2012-09-27
Information query
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