Invention Grant
- Patent Title: Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition
- Patent Title (中): 具有不同材料取向或组成的纳米线或半导体主体的共基板半导体器件
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Application No.: US13996506Application Date: 2011-12-23
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Publication No.: US09559160B2Publication Date: 2017-01-31
- Inventor: Annalisa Cappellani , Peter G. Tolchinsky , Kelin J. Kuhn , Glenn A. Glass , Van H. Le
- Applicant: Annalisa Cappellani , Peter G. Tolchinsky , Kelin J. Kuhn , Glenn A. Glass , Van H. Le
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- International Application: PCT/US2011/067242 WO 20111223
- International Announcement: WO2013/095656 WO 20130627
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/66 ; H01L29/775 ; H01L27/12 ; B82Y10/00 ; B82Y40/00 ; H01L29/06 ; H01L21/8238 ; H01L27/092

Abstract:
Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition and methods to form such common-substrate devices are described. For example, a semiconductor structure includes a first semiconductor device having a first nanowire or semiconductor body disposed above a crystalline substrate. The first nanowire or semiconductor body is composed of a semiconductor material having a first global crystal orientation. The semiconductor structure also includes a second semiconductor device having a second nanowire or semiconductor body disposed above the crystalline substrate. The second nanowire or semiconductor body is composed of a semiconductor material having a second global crystal orientation different from the first global orientation. The second nanowire or semiconductor body is isolated from the crystalline substrate by an isolation pedestal disposed between the second nanowire or semiconductor body and the crystalline substrate.
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