Invention Grant
- Patent Title: Nanowire transistor device and method for manufacturing nanowire transistor device
- Patent Title (中): 纳米线晶体管器件及其制造方法
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Application No.: US14634904Application Date: 2015-03-02
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Publication No.: US09559164B2Publication Date: 2017-01-31
- Inventor: Li-Wei Feng , Shih-Hung Tsai , Shih-Fang Hong , Chao-Hung Lin , Jyh-Shyang Jenq
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201510037261 20150126
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/20 ; H01L29/06 ; H01L21/02
Abstract:
A nanowire transistor device includes a substrate, a plurality of nanowires formed on the substrate, and a gate surrounding at least a portion of each nanowire. The nanowires respectively include a first semiconductor core and a second semiconductor core surrounding the first semiconductor core. A lattice constant of the second semiconductor core is different from a lattice constant of the first semiconductor core.
Public/Granted literature
- US20160218179A1 NANOWIRE TRANSISTOR DEVICE AND METHOD FOR MANUFACTURING NANOWIRE TRANSISTOR DEVICE Public/Granted day:2016-07-28
Information query
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