Invention Grant
US09559186B2 Epitaxially grown stacked contact structure of semiconductor device
有权
半导体器件的外延生长堆叠接触结构
- Patent Title: Epitaxially grown stacked contact structure of semiconductor device
- Patent Title (中): 半导体器件的外延生长堆叠接触结构
-
Application No.: US14792467Application Date: 2015-07-06
-
Publication No.: US09559186B2Publication Date: 2017-01-31
- Inventor: Chun Hsiung Tsai , Yan-Ting Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L21/02 ; H01L23/485 ; H01L29/417 ; H01L29/45 ; H01L29/06 ; H01L21/285 ; H01L21/768 ; H01L21/306 ; H01L21/762 ; H01L29/08 ; H01L29/737

Abstract:
The embodiments described above provide mechanisms of forming contact structures with low resistance. A strained material stack with multiple sub-layers is used to lower the Schottky barrier height (SBH) of the conductive layers underneath the contact structures. The strained material stack includes a SiGe main layer, a graded SiG layer, a GeB layer, a Ge layer, and a SiGe top layer. The GeB layer moves the Schottky barrier to an interface between GeB and a metal germanide, which greatly reduces the Schottky barrier height (SBH). The lower SBH, the Ge in the SiGe top layer forms metal germanide and high B concentration in the GeB layer help to reduce the resistance of the conductive layers underneath the contact structures.
Public/Granted literature
- US20150311315A1 Contact Structure of Semiconductor Device Public/Granted day:2015-10-29
Information query
IPC分类: