Invention Grant
US09559196B2 Semiconductor wafer, method of producing semiconductor wafer, electronic device, and method of producing electronic device
有权
半导体晶片，半导体晶片的制造方法，电子器件以及电子器件的制造方法
- Patent Title: Semiconductor wafer, method of producing semiconductor wafer, electronic device, and method of producing electronic device
- Patent Title (中): 半导体晶片，半导体晶片的制造方法，电子器件以及电子器件的制造方法
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Application No.: US13664360Application Date: 2012-10-30
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Publication No.: US09559196B2Publication Date: 2017-01-31
- Inventor: Naohiro Nishikawa , Tsuyoshi Nakano , Takayuki Inoue
- Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
- Applicant Address: JP Tokyo
- Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-105694 20100430
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L27/085 ; H01L29/66 ; H01L29/812 ; H01L21/02 ; H01L29/207
Abstract:
A semiconductor wafer includes a base wafer, a first semiconductor portion that is formed on the base wafer and includes a first channel layer containing a majority carrier of a first conductivity type, a separation layer that is formed over the first semiconductor portion and contains an impurity to create an impurity level deeper than the impurity level of the first semiconductor portion, and a second semiconductor portion that is formed over the separation layer and includes a second channel layer containing a majority carrier of a second conductivity type opposite to the first conductivity type.
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