Invention Grant
US09559215B1 Method and apparatus for making p-channel thin film transistors for OLED and LED active matrix flat panel displays
有权
制造用于OLED和LED有源矩阵平板显示器的p沟道薄膜晶体管的方法和装置
- Patent Title: Method and apparatus for making p-channel thin film transistors for OLED and LED active matrix flat panel displays
- Patent Title (中): 制造用于OLED和LED有源矩阵平板显示器的p沟道薄膜晶体管的方法和装置
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Application No.: US14757875Application Date: 2015-12-23
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Publication No.: US09559215B1Publication Date: 2017-01-31
- Inventor: Khaled Ahmed , Prashant Majhi
- Applicant: Khaled Ahmed , Prashant Majhi
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/12 ; H01L29/24 ; H01L21/02 ; H01L21/425 ; H01L21/477 ; H01L21/385 ; H01L29/66 ; H01L27/12

Abstract:
Embodiments of the invention include sulfur alloyed InGaZnO (IGZOS) thin film transistors (TFTs) and methods of making such devices. In one embodiment, the IGZOS TFT may include a substrate and a gate electrode formed over the substrate. A gate dielectric layer may be formed over the gate electrode. An IGZOS film may be formed over a surface of the gate dielectric. Additionally, embodiments of the invention include a source region and a drain region formed in contact with the IGZOS film. An opening between the source region and the drain region may define a channel region in the IGZOS film. Embodiments of the invention are able to form a p-type IGZO TFT by increasing the valence band of the IGZO material in order to eliminate the presence of trap states in the band gap. The valance band may be raised by doping the IGZO material with sulfur.
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