Invention Grant
- Patent Title: Photovoltaic device containing an N-type dopant source
- Patent Title (中): 含有N型掺杂剂源的光伏器件
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Application No.: US13232161Application Date: 2011-09-14
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Publication No.: US09559247B2Publication Date: 2017-01-31
- Inventor: Markus Gloeckler
- Applicant: Markus Gloeckler
- Applicant Address: US OH Perrysburg
- Assignee: First Solar, Inc.
- Current Assignee: First Solar, Inc.
- Current Assignee Address: US OH Perrysburg
- Agency: Blank Rome LLP
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0224 ; H01L31/073 ; H01L31/0392 ; H01L31/0296

Abstract:
Described herein is a method of using the buffer layer of a transparent conductive substrate as a dopant source for the n-type window layer of a photovoltaic device. The dopant source of the buffer layer distributes to the window layer of the photovoltaic device during semiconductor processing. Described herein are also methods of manufacturing embodiments of the substrate structure and photovoltaic device. Disclosed embodiments also describe a photovoltaic module and a photovoltaic structure with a plurality of photovoltaic devices having an embodiment of the substrate structure.
Public/Granted literature
- US20120067392A1 PHOTOVOLTAIC DEVICE CONTAINING AN N-TYPE DOPANT SOURCE Public/Granted day:2012-03-22
Information query
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