Invention Grant
US09559247B2 Photovoltaic device containing an N-type dopant source 有权
含有N型掺杂剂源的光伏器件

Photovoltaic device containing an N-type dopant source
Abstract:
Described herein is a method of using the buffer layer of a transparent conductive substrate as a dopant source for the n-type window layer of a photovoltaic device. The dopant source of the buffer layer distributes to the window layer of the photovoltaic device during semiconductor processing. Described herein are also methods of manufacturing embodiments of the substrate structure and photovoltaic device. Disclosed embodiments also describe a photovoltaic module and a photovoltaic structure with a plurality of photovoltaic devices having an embodiment of the substrate structure.
Public/Granted literature
Information query
Patent Agency Ranking
0/0