Invention Grant
- Patent Title: Semiconductor light emitting device, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting device package
- Patent Title (中): 半导体发光器件，半导体发光器件的制造方法以及半导体发光器件封装的制造方法
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Application No.: US14723869Application Date: 2015-05-28
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Publication No.: US09559260B2Publication Date: 2017-01-31
- Inventor: Dong Kuk Lee , Geun Woo Ko , Geon-Wook Yoo , Nam Goo Cha
- Applicant: Dong Kuk Lee , Geun Woo Ko , Geon-Wook Yoo , Nam Goo Cha
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, PLC
- Priority: KR10-2014-0091930 20140721
- Main IPC: H01L33/24
- IPC: H01L33/24 ; H01L33/08 ; H01L33/42 ; H01L33/32 ; H01L33/18 ; H01L33/20 ; H01L33/22 ; H01L33/38
Abstract:
There is provided a semiconductor light emitting device 100 including a substructure 101, 120, 130 including at least one light emitting region R1 including a plurality of three-dimensional (3-D) light emitting nanostructures 140 and at least one electrode region R2, R3 including a plurality of locations CP2A, 17A, 17B, 18A, 18B wherein an arrangement of the plurality of three-dimensional (3-D) light emitting nanostructures 140 and the plurality of locations CP2A, 17A, 17B, 18A, 18B are identical.
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