Invention Grant
US09559489B2 Semiconductor laser device, light source device, method of producing semiconductor laser device, and method of producing light source device
有权
半导体激光装置，光源装置，半导体激光装置的制造方法以及光源装置的制造方法
- Patent Title: Semiconductor laser device, light source device, method of producing semiconductor laser device, and method of producing light source device
- Patent Title (中): 半导体激光装置，光源装置，半导体激光装置的制造方法以及光源装置的制造方法
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Application No.: US14979346Application Date: 2015-12-22
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Publication No.: US09559489B2Publication Date: 2017-01-31
- Inventor: Eiichiro Okahisa
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-Shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-Shi
- Agency: Foley & Lardner LLP
- Priority: JP2014-264049 20141226
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/022 ; H01S5/024 ; H01S5/02 ; H01S5/0625 ; H01S5/40
Abstract:
A semiconductor laser device includes a semiconductor laser element; a mounting body on which the semiconductor laser element is mounted; a base having a recess in which the mounting body is mounted and a through hole that penetrates a part of a bottom of the recess; and an embedded member disposed within the through hole. An uppermost surface of the embedded member is joined to a lowermost surface of the mounting body and a lowermost surface of the embedded member is positioned higher than a lowermost surface of the base.
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