Invention Grant
US09561954B2 Method of fabricating MEMS devices having a plurality of cavities
有权
制造具有多个空腔的MEMS装置的方法
- Patent Title: Method of fabricating MEMS devices having a plurality of cavities
- Patent Title (中): 制造具有多个空腔的MEMS装置的方法
-
Application No.: US14577628Application Date: 2014-12-19
-
Publication No.: US09561954B2Publication Date: 2017-02-07
- Inventor: Shyh-Wei Cheng , Jui-Chun Weng , Hsi-Cheng Hsu , Chih-Yu Wang , Jung-Kuo Tu , Che-Jung Chu , Yu-Ting Hsu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: B81C1/00
- IPC: B81C1/00 ; B81C3/00 ; B81B7/02 ; B81B7/00

Abstract:
A method for forming an integrated circuit having Micro-electromechanical Systems (MEMS) includes forming at least two recesses into a first layer, forming at least two recesses into a second layer, the at least two recesses of the second layer being complementary to the recesses of the first layer. An intermediate layer is bonded onto the second layer, the intermediate layer includes through-holes corresponding to the recesses of the second layer. The first layer is bonded to the intermediate layer such that cavities are formed, the cavities to act as operating environments for MEMS devices. The two cavities have different pressures.
Public/Granted literature
- US20150104895A1 METHOD OF FABRICATING MEMS DEVICES HAVING A PLURALITY OF CAVITIES Public/Granted day:2015-04-16
Information query