Invention Grant
- Patent Title: Plasma CVD apparatus
- Patent Title (中): 等离子体CVD装置
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Application No.: US13814945Application Date: 2011-10-27
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Publication No.: US09562290B2Publication Date: 2017-02-07
- Inventor: Hiroshi Tamagaki , Tadao Okimoto
- Applicant: Hiroshi Tamagaki , Tadao Okimoto
- Applicant Address: JP Kobe-shi
- Assignee: Kobe Steel, Ltd.
- Current Assignee: Kobe Steel, Ltd.
- Current Assignee Address: JP Kobe-shi
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-243717 20101029
- International Application: PCT/JP2011/006022 WO 20111027
- International Announcement: WO2012/056707 WO 20120503
- Main IPC: C23C16/54
- IPC: C23C16/54 ; C23C16/44 ; C23C16/50 ; H01J37/32

Abstract:
A plasma CVD apparatus capable of preventing unnecessary deposition on a supplying portion of a source gas so as to suppress generation of flakes, and thereby depositing a CVD coating excellent in quality is provided. This plasma CVD apparatus includes a vacuum chamber, a vacuum pump system for vacuuming an interior of the vacuum chamber, a deposition roller around which a substrate is wound, the deposition roller being provided in the vacuum chamber, a gas supplying portion for supplying the source gas to the interior of the vacuum chamber, and a plasma power supply for forming a plasma generating region in the vicinity of a surface of the deposition roller and thereby depositing a coating on the substrate. The gas supplying portion is provided in a plasma non-generating region positioned on the opposite side of the plasma generating region with respect to the deposition roller.
Public/Granted literature
- US20130133577A1 PLASMA CVD APPARATUS Public/Granted day:2013-05-30
Information query
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