Invention Grant
- Patent Title: Probe apparatus
- Patent Title (中): 探头设备
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Application No.: US14328860Application Date: 2014-07-11
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Publication No.: US09562942B2Publication Date: 2017-02-07
- Inventor: Eiichi Shinohara , Kenji Yamaguchi , Masataka Hatta
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2013-145598 20130711; JP2014-065736 20140327
- Main IPC: G01R31/26
- IPC: G01R31/26 ; G01R1/04 ; G01R1/067 ; G01R31/319 ; G01R31/28

Abstract:
A probe apparatus can suppress a spark from occurring near a wafer surface simply and efficiently when inspecting electrical characteristics of a semiconductor device at wafer level. A spark preventing device 50 mounted in the probe apparatus includes a surrounding member 52 which surrounds probe needles 24G and 24S between a probe card 16 and a mounting table 12; and a gas supply device 54 configured to supply a gas to a vicinity of the probe needles 24G and 24S through an inside or a vicinity of the surrounding member 52 to form an atmosphere of a preset pressure higher than an atmospheric pressure in the vicinity of the probe needles 24G and 24S when inspecting the electrical characteristics of each chip on a semiconductor wafer W. A contact plate 34 also serves as the surrounding member 52.
Public/Granted literature
- US20150015285A1 PROBE APPARATUS Public/Granted day:2015-01-15
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