Invention Grant
- Patent Title: Semiconductor device inspection device and semiconductor device inspection method
- Patent Title (中): 半导体器件检查装置和半导体器件检查方法
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Application No.: US14764246Application Date: 2014-01-30
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Publication No.: US09562944B2Publication Date: 2017-02-07
- Inventor: Tomonori Nakamura , Mitsunori Nishizawa
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2013-018683 20130201
- International Application: PCT/JP2014/052146 WO 20140130
- International Announcement: WO2014/119676 WO 20140807
- Main IPC: G01R31/311
- IPC: G01R31/311 ; G01N21/95 ; G01R23/16 ; H01L21/66

Abstract:
A semiconductor device inspection system includes a laser beam source, a tester, an optical sensor, a first spectrum analyzer for measuring first phase information serving as phase information of the detection signal, a reference signal generating unit for generating a reference signal of a predetermined frequency, a second spectrum analyzer for measuring second phase information serving as phase information of a reference signal, and an analysis unit for deriving phase information of the detection signal at the predetermined frequency, wherein the first spectrum analyzer measures the first phase information with respect to the reference frequency, the second spectrum analyzer measures the second phase information with respect to the reference frequency, and the frequency of the base signal of the first spectrum analyzer and the phase thereof are synchronized with the frequency of the base signal of the second spectrum analyzer and the phase thereof.
Public/Granted literature
- US20150377959A1 SEMICONDUCTOR DEVICE INSPECTION DEVICE AND SEMICONDUCTOR DEVICE INSPECTION METHOD Public/Granted day:2015-12-31
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