Invention Grant
- Patent Title: Large-area nanopatterning apparatus and method
- Patent Title (中): 大面积纳米图案装置及方法
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Application No.: US14362464Application Date: 2012-10-25
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Publication No.: US09563119B2Publication Date: 2017-02-07
- Inventor: Hongbo Lan
- Applicant: Hongbo Lan
- Applicant Address: CN Qingdao
- Assignee: QINGDAO BONA OPTOELECTRONICS EQUIPMENT CO., LTD.
- Current Assignee: QINGDAO BONA OPTOELECTRONICS EQUIPMENT CO., LTD.
- Current Assignee Address: CN Qingdao
- Agency: Knobbe, Martens, Olson & Bear LLP
- Priority: CN201210376654 20120929
- International Application: PCT/CN2012/001430 WO 20121025
- International Announcement: WO2014/047750 WO 20140403
- Main IPC: C23F1/00
- IPC: C23F1/00 ; G03F7/00 ; H01L33/00 ; B82Y40/00 ; B82Y10/00

Abstract:
The present invention discloses a nanoimprint apparatus and method useful in the cost-effective mass production of nanostructures over large areas on various substrates or surfaces, especially suitable for non-flat substrates or curved surfaces. The nanoimprint apparatus is composed of a wafer stage, a vacuum chuck, a substrate, a UV-curable nanoimprint resist and the like. The method implementing large-area nanopatterning based on the apparatus includes the following steps: (1) pretreatment, (2) imprinting, (3) curing, (4) demolding, (5) post treatment and (6) transferring of imprinted patterns. By utilizing the apparatus and the approach, large-area, and/or high-aspect-ratio micro/nanostructures can be mass produced, especially on a non-flat substrate or a curved surface or a fragile substrate at low cost and high throughput.
Public/Granted literature
- US20140305904A1 LARGE-AREA NANOPATTERNING APPARATUS AND METHOD Public/Granted day:2014-10-16
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