Invention Grant
- Patent Title: Persistent content in nonvolatile memory
- Patent Title (中): 非易失性存储器中的持久内容
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Application No.: US14848159Application Date: 2015-09-08
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Publication No.: US09563554B2Publication Date: 2017-02-07
- Inventor: Jared E. Hulbert , John C. Rudelic , Hongyu Wang
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F9/50 ; G06F12/08 ; G11C11/56 ; G11C13/00 ; G11C16/04 ; G11C15/04
Abstract:
Applications may request persistent storage in nonvolatile memory. The persistent storage is maintained across power events and application instantiations. Persistent storage may be maintained by systems with or without memory management units.
Public/Granted literature
- US20150378889A1 PERSISTENT CONTENT IN NONVOLATILE MEMORY Public/Granted day:2015-12-31
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