Invention Grant
- Patent Title: Two phase password input mechanism
- Patent Title (中): 两相密码输入机制
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Application No.: US13762023Application Date: 2013-02-07
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Publication No.: US09563756B2Publication Date: 2017-02-07
- Inventor: Shubhanshu Nagar
- Applicant: Samsung Electronics Co. Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Jefferson IP Law, LLP
- Main IPC: G06F21/00
- IPC: G06F21/00 ; G06F21/31 ; G06F21/36 ; G06F21/83 ; G06F1/16

Abstract:
An apparatus and method for a two phase password input mechanism are provided. The method includes resetting a password entry, displaying a password entry screen, inputting a password element of a plurality of password elements, determining whether the entered password is complete, determining whether the entered password is correct when the entered password is complete, and if the entered password is correct, unlocking the mobile device. The plurality of password elements include at least two elements that cannot be observed from a same viewpoint.
Public/Granted literature
- US20140223550A1 TWO PHASE PASSWORD INPUT MECHANISM Public/Granted day:2014-08-07
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