Invention Grant
- Patent Title: Semiconductor storage device and sense amplifier circuit
- Patent Title (中): 半导体存储器件和读出放大器电路
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Application No.: US15064381Application Date: 2016-03-08
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Publication No.: US09564182B2Publication Date: 2017-02-07
- Inventor: Tsuyoshi Koike , Yoshinobu Yamagami
- Applicant: SOCIONEXT INC.
- Applicant Address: JP Kanagawa
- Assignee: SOCIONEXT INC.
- Current Assignee: SOCIONEXT INC.
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2013-186261 20130909
- Main IPC: G11C7/02
- IPC: G11C7/02 ; G11C7/06 ; G11C11/419 ; H01L27/11 ; G11C5/14 ; H01L27/105 ; G11C7/12 ; H01L29/78

Abstract:
A cross-coupled circuit provided between first and second bit lines that form a bit line pair includes first to fourth fin transistors of p-channel type. The first transistor has its source connected to a first power supply and its gate connected to the second bit line. The second transistor has its source connected to the first power supply and its gate connected to the first bit line. The third transistor has its source connected to the first transistor's drain and its drain connected to the first bit line. The fourth transistor has its source connected to the second transistor's drain and its drain connected to the second bit line.
Public/Granted literature
- US20160189756A1 SEMICONDUCTOR STORAGE DEVICE AND SENSE AMPLIFIER CIRCUIT Public/Granted day:2016-06-30
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