Invention Grant
US09564182B2 Semiconductor storage device and sense amplifier circuit 有权
半导体存储器件和读出放大器电路

Semiconductor storage device and sense amplifier circuit
Abstract:
A cross-coupled circuit provided between first and second bit lines that form a bit line pair includes first to fourth fin transistors of p-channel type. The first transistor has its source connected to a first power supply and its gate connected to the second bit line. The second transistor has its source connected to the first power supply and its gate connected to the first bit line. The third transistor has its source connected to the first transistor's drain and its drain connected to the first bit line. The fourth transistor has its source connected to the second transistor's drain and its drain connected to the second bit line.
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