Invention Grant
US09564206B2 Semiconductor device 有权
半导体器件

Semiconductor device
Abstract:
Embodiments of the present invention relate to a latch circuit (L20) which latches a data mask signal (DM) in response to a one-shot signal (NS), and changes the data mask signal (DM) to an active level in response to an error signal (ERR), which indicates that an error is present in write data (DQ), being at an active level; a buffer circuit (BF2) which outputs the data mask signal (DM) that has been latched by the latch circuit (L20), said data mask signal (DM) being output in response to a write clock signal (WCLK2); and a main amplifier (80) which outputs the write data (DQ) to an internal circuit on the condition that the data mask signal (DM) which has been output from the buffer circuit (BF2) is at an inactive level. The present invention can prevent the writing of erroneous write data, and is capable of preventing increased chip surface area.
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