Invention Grant
US09564217B1 Semiconductor memory device having integrated DOSRAM and NOSRAM
有权
具有集成DOSRAM和NOSRAM的半导体存储器件
- Patent Title: Semiconductor memory device having integrated DOSRAM and NOSRAM
- Patent Title (中): 具有集成DOSRAM和NOSRAM的半导体存储器件
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Application No.: US14886116Application Date: 2015-10-19
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Publication No.: US09564217B1Publication Date: 2017-02-07
- Inventor: Zhibiao Zhou , Chen-Bin Lin , Chi-Fa Ku , Shao-Hui Wu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L27/10
- IPC: H01L27/10 ; H01L29/04 ; H01L29/24 ; H01L29/66 ; H01L29/78 ; G11C14/00 ; H01L29/786 ; H01L27/108 ; H01L27/105
Abstract:
A semiconductor memory device includes a semiconductor substrate having a main surface, at least a first dielectric layer on the main surface of the semiconductor substrate, a first OS FET device and a second OS FET device disposed on the first dielectric layer, at least a second dielectric layer covering the first dielectric layer, the first OS FET device, and the second OS FET device, a first MIM capacitor on the second dielectric layer and electrically coupled to the first OS FET device, and a second MIM capacitor on the second dielectric layer and electrically coupled to the second OS FET device.
Information query
IPC分类:
