Invention Grant
- Patent Title: Semiconductor memory device and method of operating the same
- Patent Title (中): 半导体存储器件及其操作方法
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Application No.: US14683720Application Date: 2015-04-10
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Publication No.: US09564230B2Publication Date: 2017-02-07
- Inventor: Yoon Soo Jang
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2012-0093161 20120824
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/14 ; G11C16/04 ; G11C16/34

Abstract:
A semiconductor memory device and a method of operating the same are disclosed. The semiconductor memory device includes a memory cell array configured to include memory cells, a peripheral circuit configured to perform an erase operation and a soft program operation and a control circuit configured to control the peripheral circuit so that the memory cells are programmed though a hot carrier injection HCI method when the soft program operation is performed.
Public/Granted literature
- US20150213902A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME Public/Granted day:2015-07-30
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