Invention Grant
US09564233B1 Open block source bias adjustment for an incompletely programmed block of a nonvolatile storage device 有权
非易失性存储设备未完全编程块的开放源偏置调整

Open block source bias adjustment for an incompletely programmed block of a nonvolatile storage device
Abstract:
Apparatuses, systems, methods, and computer program products are disclosed for adjusting a voltage level for a write operation on a partially programmed block of a nonvolatile storage device. A write module receives a request to perform a write operation for one or more storage cells of an partially programmed block of a nonvolatile storage device. A characteristic module determines whether a characteristic for a partially programmed block of a nonvolatile storage device satisfies a threshold. A voltage adjustment module adjusts a voltage level applied to one or more source lines connected to the one or more storage cells during a write operation in response to determining a characteristic satisfies a threshold.
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