Invention Grant
- Patent Title: Open block source bias adjustment for an incompletely programmed block of a nonvolatile storage device
- Patent Title (中): 非易失性存储设备未完全编程块的开放源偏置调整
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Application No.: US15061919Application Date: 2016-03-04
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Publication No.: US09564233B1Publication Date: 2017-02-07
- Inventor: Hoon Cho , Jun Wan , Yanjie Wang
- Applicant: SanDisk Technologies, Inc.
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Plano
- Agency: Kunzler Law Group, PC
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/16 ; G11C16/26 ; G11C16/34

Abstract:
Apparatuses, systems, methods, and computer program products are disclosed for adjusting a voltage level for a write operation on a partially programmed block of a nonvolatile storage device. A write module receives a request to perform a write operation for one or more storage cells of an partially programmed block of a nonvolatile storage device. A characteristic module determines whether a characteristic for a partially programmed block of a nonvolatile storage device satisfies a threshold. A voltage adjustment module adjusts a voltage level applied to one or more source lines connected to the one or more storage cells during a write operation in response to determining a characteristic satisfies a threshold.
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