Invention Grant
- Patent Title: Method of manufacturing nanowire array using induced growth
- Patent Title (中): 使用诱导生长制造纳米线阵列的方法
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Application No.: US14975865Application Date: 2015-12-21
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Publication No.: US09564318B2Publication Date: 2017-02-07
- Inventor: Jun Hyuk Park , Jong Kyu Kim , Sun Yong Hwang
- Applicant: POSTECH ACADEMY-INDUSTRY FOUNDATION
- Applicant Address: KR Gyeonsangbuk-Do
- Assignee: POSTECH ACADEMY-INDUSTRY FOUNDATION
- Current Assignee: POSTECH ACADEMY-INDUSTRY FOUNDATION
- Current Assignee Address: KR Gyeonsangbuk-Do
- Agency: Revolution IP, PLLC
- Priority: KR10-2014-0187927 20141224
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/47
Abstract:
Provided is a method of manufacturing a nanowire array using induced growth, in which a nitride inorganic nanowire is grown from a nitride seed by forming the nitride seed on a sapphire or silicon substrate, forming an organic nanowire pattern and a dielectric nanotunnel using the nanowire pattern as a template on the nitride seed, and using the nanotunnel as an induced growth mask.
Public/Granted literature
- US20160189960A1 METHOD OF MANUFACTURING NANOWIRE ARRAY USING INDUCED GROWTH Public/Granted day:2016-06-30
Information query
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