Invention Grant
- Patent Title: Lithography using interface reaction
- Patent Title (中): 光刻使用界面反应
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Application No.: US14333544Application Date: 2014-07-17
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Publication No.: US09564326B2Publication Date: 2017-02-07
- Inventor: Kangguo Cheng , Pouya Hashemi , Ali Khakifirooz , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Andrew G. Wakim
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/268 ; H01L21/308 ; H01L21/311 ; H01L29/78 ; H01L21/027 ; H01L21/3105 ; H01L21/324
Abstract:
A method of forming a semiconductor structure by; forming a first mask trench in a first mask, where the first mask is on a substrate; forming a second mask in the first mask trench; and forming a third mask between the first mask and the second mask by reacting the first mask with the second mask, where the first mask, the second mask, and the third mask all have different etching properties and the third mask is a combination of the first mask and the second mask.
Public/Granted literature
- US20160020098A1 LITHOGRAPHY USING INTERFACE REACTION Public/Granted day:2016-01-21
Information query
IPC分类:
