The method for fabricating patterns made from first material having: providing a substrate covered by a covering layer, forming a first mask by means of a self-assembled structure of block copolymers, the first mask having first patterns, making a second mask from the first mask, the second mask having a second series of patterns organized according to the first repetition pitch or an integral multiple of the first repetition pitch, the second series having less patterns than the first series, depositing and exposing a resin layer to form an intermediate mask on the first mask, the intermediate mask covering a part of the first patterns formed in the first mask and having second holes facing the first holes, etching the covering layer through the facing first and second holes to form third holes, filling the third holes with a first material to form the patterns made from first material.