Invention Grant
- Patent Title: Polishing liquid and method for polishing substrate using the polishing liquid
- Patent Title (中): 研磨液和抛光液的研磨方法
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Application No.: US13884883Application Date: 2011-12-22
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Publication No.: US09564337B2Publication Date: 2017-02-07
- Inventor: Munehiro Oota , Takaaki Tanaka , Toshio Takizawa , Shigeru Yoshikawa , Takaaki Matsumoto , Takahiro Yoshikawa , Takashi Shinoda
- Applicant: Munehiro Oota , Takaaki Tanaka , Toshio Takizawa , Shigeru Yoshikawa , Takaaki Matsumoto , Takahiro Yoshikawa , Takashi Shinoda
- Applicant Address: JP Tokyo
- Assignee: HITACHI CHEMICAL CO., LTD.
- Current Assignee: HITACHI CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Griffin and Szipl PC
- Priority: JPP2010-287594 20101224
- International Application: PCT/JP2011/079873 WO 20111222
- International Announcement: WO2012/086781 WO 20120628
- Main IPC: H01L21/306
- IPC: H01L21/306 ; B24B37/04 ; C09K3/14 ; H01L21/3105 ; C09G1/02
Abstract:
Provided is a polishing liquid including cerium oxide particles, an organic acid A, a polymer compound B having a carboxyl acid group or a carboxylate group, and water, wherein the organic acid A has at least one group selected from the group consisting of —COOM group, -Ph-OM group, —SO3M group and —PO3M2 group, pKa of the organic acid A is less than 9, a content of the organic acid A is 0.001 to 1 mass % with respect to the total mass of the polishing liquid, and a content of the polymer compound B is 0.01 to 0.50 mass % with respect to the total mass of the polishing liquid, and pH is in the range of 4.0 to 7.0.
Public/Granted literature
- US20130260558A1 POLISHING LIQUID AND METHOD FOR POLISHING SUBSTRATE USING THE POLISHING LIQUID Public/Granted day:2013-10-03
Information query
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