Invention Grant
- Patent Title: Ultra low silicon loss high dose implant strip
- Patent Title (中): 超低硅损耗高剂量植入条
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Application No.: US14721977Application Date: 2015-05-26
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Publication No.: US09564344B2Publication Date: 2017-02-07
- Inventor: David Cheung , Haoquan Fang , Jack Kuo , Ilia Kalinovski , Zhao Li , Guhua Yao , Anirban Guha , Kirk J. Ostrowski
- Applicant: Novellus Systems, Inc.
- Applicant Address: US CA Fremont
- Assignee: Novellus Systems, Inc.
- Current Assignee: Novellus Systems, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00 ; H01L21/311 ; H01L21/3213 ; G03F7/42
Abstract:
Improved methods for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, plasma is generated using elemental hydrogen, a fluorine-containing gas and a protectant gas. The plasma-activated gases reacts with the high-dose implant resist, removing both the crust and bulk resist layers, while simultaneously protecting exposed portions of the work piece surface. The work piece surface is substantially residue free with low silicon loss.
Public/Granted literature
- US20150332933A1 ULTRA LOW SILICON LOSS HIGH DOSE IMPLANT STRIP Public/Granted day:2015-11-19
Information query
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