The present invention discloses a via-hole etching method related to semiconductor manufacturing field, and the method overcomes the defects of an uncontrollable end point of a via-hole and an unfavorable profile-angle in a conventional via-hole etching method. The via-hole etching method includes: forming a structure for via-hole etching, includes: a low-temperature poly-silicon layer, a gate insulating layer, a gate metal layer and an interlayer insulating layer, which are sequentially formed on a substrate; forming a mask layer comprising a via-hole masking pattern on the structure for via-hole etching; by using a first etching process, etching the structure for via-hole etching to a first thickness of the gate insulating layer; by using a second etching process, etching the structure for via-hole etching to etch away the remaining thickness of the gate insulating layer, and uncovering the low-temperature poly-silicon layer; removing the mask layer to form a via-hole structure.