Invention Grant
- Patent Title: Substrate processing method and method of manufacturing semiconductor device
- Patent Title (中): 基板加工方法及制造半导体器件的方法
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Application No.: US15164625Application Date: 2016-05-25
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Publication No.: US09564360B2Publication Date: 2017-02-07
- Inventor: Hiroshi Akasaka , Masayoshi Ikeda , Kazuhiro Kimura , Yasushi Kamiya , Tomohiko Toyosato
- Applicant: CANON ANELVA CORPORATION
- Applicant Address: JP Kawasaki-shi
- Assignee: CANON ANELVA CORPORATION
- Current Assignee: CANON ANELVA CORPORATION
- Current Assignee Address: JP Kawasaki-shi
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2013-267453 20131225
- Main IPC: H01L21/768
- IPC: H01L21/768 ; C23C14/04 ; C23C14/58 ; H01L29/66 ; H01L29/78 ; H01L21/285 ; C23C16/56
Abstract:
An object of the present invention is to provide a method which enable a material to be fully embedded into a recess portion with a deposition film left in the recess portion. A method in one embodiment comprises: a first irradiation step of irradiating a deposition film formed on an opening portion of a recess portion in a substrate with a particle beam in a direction at a first angle with respect to a substrate in-plane direction, to remove part of the deposition film in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the deposition film with the particle beam in a direction at a second angle which is closer to perpendicular to the substrate in-plane direction than the first angle is, to remove part of the remaining deposition film in the thickness direction.
Public/Granted literature
- US20160268162A1 SUBSTRATE PROCESSING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2016-09-15
Information query
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