Invention Grant
- Patent Title: Method and apparatus for plasma dicing a semi-conductor wafer
- Patent Title (中): 用于等离子体切割半导体晶片的方法和装置
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Application No.: US14974840Application Date: 2015-12-18
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Publication No.: US09564366B2Publication Date: 2017-02-07
- Inventor: Linnell Martinez , David Pays-Volard , Chris Johnson , David Johnson , Russell Westerman , Gordon M. Grivna
- Applicant: Plasma-Therm LLC
- Applicant Address: US FL St. Petersburg
- Assignee: Plasma-Therm LLC
- Current Assignee: Plasma-Therm LLC
- Current Assignee Address: US FL St. Petersburg
- Agency: Burr & Forman LLP
- Agent Harvey S. Kauget
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/3065 ; H01L21/67 ; H01L21/683 ; H01L21/687 ; H01L21/782 ; H01J37/32 ; H01L21/68 ; H01L21/311 ; H01L21/677
Abstract:
The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
Public/Granted literature
- US20160111332A1 Method and Apparatus for Plasma Dicing a Semi-conductor Wafer Public/Granted day:2016-04-21
Information query
IPC分类:
