Invention Grant
US09564370B1 Effective device formation for advanced technology nodes with aggressive fin-pitch scaling
有权
先进技术节点有效的器件形成，具有积极的鳍间距缩放
- Patent Title: Effective device formation for advanced technology nodes with aggressive fin-pitch scaling
- Patent Title (中): 先进技术节点有效的器件形成，具有积极的鳍间距缩放
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Application No.: US14887538Application Date: 2015-10-20
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Publication No.: US09564370B1Publication Date: 2017-02-07
- Inventor: Injo Ok , Sanjay C. Mehta , Balasubramanian Pranatharthiharan , Soon-Cheon Seo , Charan V. Surisetty
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Steven J. Meyers
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/00 ; H01L29/00 ; H01L21/8234 ; H01L29/78 ; H01L29/423 ; H01L29/51 ; H01L29/66 ; H01L21/283 ; H01L21/311 ; H01L27/088
Abstract:
After forming a gate stack straddling a portion of each semiconductor fin of a plurality of semiconductor fins located over a substrate, a gate liner is formed on sidewalls of a lower portion of the gate stack that contacts the plurality of semiconductor fins and a gate spacer having a width greater than a width of the gate liner is formed on sidewalls of an upper portion of the gate stack that is located above the plurality of semiconductor fins. The width of the gate spacer thus is not limited by the fin pitch, and can be optimized to improve the device performance.
Information query
IPC分类:
