Invention Grant
- Patent Title: Low-K dielectric layer and porogen
- Patent Title (中): 低K电介质层和致孔剂
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Application No.: US14733573Application Date: 2015-06-08
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Publication No.: US09564383B2Publication Date: 2017-02-07
- Inventor: Joung-Wei Liou , Hui-Chun Yang , Yu-Yun Peng , Keng-Chu Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/31 ; H01L23/532 ; H01L21/768 ; H01L21/02
Abstract:
A system and method for a low-k dielectric layer are provided. A preferred embodiment comprises forming a matrix and forming a porogen within the matrix. The porogen comprises an organic ring structure with fewer than fifteen carbons and a large percentage of single bonds. Additionally, the porogen may have a viscosity greater than 1.3 and a Reynolds numbers less than 0.5.
Public/Granted literature
- US20150270189A1 Low-K Dielectric Layer and Porogen Public/Granted day:2015-09-24
Information query
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