Invention Grant
- Patent Title: ESD device and structure therefor
- Patent Title (中): ESD器件及其结构
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Application No.: US15094853Application Date: 2016-04-08
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Publication No.: US09564424B2Publication Date: 2017-02-07
- Inventor: David D. Marreiro , Yupeng Chen , Ralph Wall , Umesh Sharma , Harry Yue Gee
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/74
Abstract:
In one embodiment, an ESD device is configured to include a trigger device that assists in forming a trigger of the ESD device. The trigger device is configured to enable a transistor or a transistor of an SCR responsively to an input voltage having a value that is no less than the trigger value of the ESD device.
Public/Granted literature
- US20160225756A1 METHOD OF FORMING AN ESD DEVICE AND STRUCTURE THEREFOR Public/Granted day:2016-08-04
Information query
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