Invention Grant
- Patent Title: Schottky diodes for replacement metal gate integrated circuits
- Patent Title (中): 用于替换金属栅集成电路的肖特基二极管
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Application No.: US14996360Application Date: 2016-01-15
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Publication No.: US09564427B2Publication Date: 2017-02-07
- Inventor: Mahalingam Nandakumar
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/49 ; H01L29/872 ; H01L29/47 ; H01L29/66 ; H01L29/36
Abstract:
An integrated circuit and method with a metal gate transistor and with a Schottky diode where the metal used to form the Schottky diode is the metal used to form the metal gate.
Public/Granted literature
- US20160133622A1 SCHOTTKY DIODES FOR REPLACEMENT METAL GATE INTEGRATED CIRCUITS Public/Granted day:2016-05-12
Information query
IPC分类:
