Invention Grant
US09564433B2 Semiconductor device with improved contact structure and method of forming same
有权
具有改进的接触结构的半导体器件及其形成方法
- Patent Title: Semiconductor device with improved contact structure and method of forming same
- Patent Title (中): 具有改进的接触结构的半导体器件及其形成方法
-
Application No.: US14617467Application Date: 2015-02-09
-
Publication No.: US09564433B2Publication Date: 2017-02-07
- Inventor: Jhon-Jhy Liaw
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/768 ; H01L21/321 ; H01L29/06 ; H01L29/66 ; H01L21/8234 ; H01L23/485 ; H01L23/528 ; H01L27/11 ; H01L27/02 ; H01L23/522
Abstract:
A contact structure includes a first contact formed in a first dielectric layer connecting to the source/drain region of a MOS transistor, and a second contact formed in a second dielectric layer connecting to a gate region of a MOS transistor or to a first contact. A butted contact structure abutting a source/drain region and a gate electrode includes a first contact formed in a first dielectric layer connecting to the source/drain region of a MOS transistor, and a second contact formed in a second dielectric layer with one end resting on the gate electrode and the other end in contact with the first contact.
Public/Granted literature
- US20150221642A1 Semiconductor Device with Improved Contact Structure and Method of Forming Same Public/Granted day:2015-08-06
Information query
IPC分类:
