Invention Grant
- Patent Title: Flash memory structure
- Patent Title (中): 闪存结构
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Application No.: US14718171Application Date: 2015-05-21
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Publication No.: US09564448B2Publication Date: 2017-02-07
- Inventor: Fu-Ting Sung , Chung-Chiang Min , Wei-Hang Huang , Shih-Chang Liu , Chia-Shiung Tsai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L21/283 ; H01L27/115 ; H01L29/78 ; H01L21/28 ; H01L29/34 ; H01L29/423 ; H01L29/66 ; H01L23/528 ; H01L29/49
Abstract:
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a control gate formed over the substrate. The semiconductor device structure further includes a memory gate formed over the substrate and a first spacer formed on a sidewall of the memory gate. The semiconductor device structure further includes a contact formed over the memory gate, wherein a portion of the contact extends into the first spacer.
Public/Granted literature
- US20150263015A1 FLASH MEMORY STRUCTURE Public/Granted day:2015-09-17
Information query
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