Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
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Application No.: US15014439Application Date: 2016-02-03
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Publication No.: US09564504B2Publication Date: 2017-02-07
- Inventor: Masahiro Nishi
- Applicant: Sumitomo Electric Device Innovations, Inc.
- Applicant Address: JP Yokohama-shi
- Assignee: Sumitomo Electric Device Innovations, Inc.
- Current Assignee: Sumitomo Electric Device Innovations, Inc.
- Current Assignee Address: JP Yokohama-shi
- Agency: Venable LLP
- Agent Michael A. Sartori; Laura G. Remus
- Priority: JP2013-137116 20130628
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L29/45 ; H01L21/285 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L29/20 ; H01L21/02 ; H01L21/283 ; H01L21/306 ; H01L21/324 ; H01L21/3213 ; H01L21/768
Abstract:
A manufacturing method according to an embodiment of this invention is a method of manufacturing a semiconductor device, which has: a first step of forming a first electrode 22 containing Ti or Ta on a top face of a nitride semiconductor layer 18; a second step of forming a second electrode 24 containing Al on a top face of the first electrode 22; a third step of forming a coating metal layer 26 covering at least one of an edge of a top face of the second electrode 24 and a side face of the second electrode 24, having a window 26a exposing the top face of the second electrode 24 in a region separated from the foregoing edge, and containing at least one of Ta, Mo, Pd, Ni, and Ti; and a step of performing a thermal treatment, after the third step.
Public/Granted literature
- US20160225875A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2016-08-04
Information query
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