Invention Grant
- Patent Title: Semiconductor device and method
- Patent Title (中): 半导体器件及方法
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Application No.: US14723954Application Date: 2015-05-28
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Publication No.: US09564524B2Publication Date: 2017-02-07
- Inventor: Gilberto Curatola , Oliver Haeberlen , Simone Lavanga , Gianmauro Pozzovivo , Fabian Reiher
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Eschweller & Associates, LLC
- Priority: DE102014107560 20140528
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/778 ; H01L29/20 ; H01L21/762 ; H01L29/06 ; H01L29/205 ; H01L29/66 ; H01L29/417 ; H01L29/51
Abstract:
A semiconductor device includes a device region including a compound semiconductor material and a non-device region at least partially surrounding the device region. The semiconductor device further includes a dielectric material in the non-device region and at least one electrode in the device region. The semiconductor device further includes at least one pad electrically coupled to the at least one electrode, wherein the at least one pad is arranged on the dielectric material in the non-device region.
Public/Granted literature
- US20150349105A1 SEMICONDUCTOR DEVICE AND METHOD Public/Granted day:2015-12-03
Information query
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