A compound semiconductor device includes: a substrate; and a buffer layer, a first carrier supply layer, a first spacer layer, a channel layer, a second spacer layer, a second carrier supply layer, and a contact layer provided in order on the substrate, wherein the first carrier supply layer is a uniformly doped layer in which an impurity is uniformly doped, the second carrier supply layer is a planar doped layer in which an impurity is locally doped, and no Al mixed crystal layer having higher resistance values than the first and second spacer layers is provided between the buffer layer and the first spacer layer and between the second spacer layer and the contact layer.