Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors

Invention Grant

US09564531B2 Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors 有权

Title translation: 薄膜晶体管，制造薄膜晶体管的方法以及包括薄膜晶体管的半导体器件

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Patent Title: Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors
Patent Title (中): 薄膜晶体管，制造薄膜晶体管的方法以及包括薄膜晶体管的半导体器件
Application No.: US13064366

Application Date: 2011-03-22
Publication No.: US09564531B2

Publication Date: 2017-02-07
Inventor: Kyung-Bae Park , Myung-Kwan Ryu , Jong-Baek Seon , Sang-Yoon Lee , Bon-Won Koo
Applicant: Kyung-Bae Park , Myung-Kwan Ryu , Jong-Baek Seon , Sang-Yoon Lee , Bon-Won Koo
Applicant Address: KR Gyeonggi-do
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Gyeonggi-do
Agency: Harness, Dickey & Pierce, P.L.C.
Priority: KR10-2010-0025162 20100322; KR10-2010-0106851 20101029
Main IPC: H01L29/786
IPC: H01L29/786 ; H01L29/49

Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors

Abstract:

Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.

Abstract(Chinese):

薄膜晶体管，包括设置在漏电极和源电极之间的半导体沟道; 以及栅极绝缘层，其设置在所述半导体沟道和栅电极之间，其中所述半导体沟道包括第一金属氧化物，所述栅极绝缘层包括第二金属氧化物，并且所述第二金属氧化物的至少一种金属至少与第一金属氧化物的一种金属，薄膜晶体管的制造方法以及包括薄膜晶体管的半导体器件。

Public/Granted literature

US20110227064A1 Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors Public/Granted day:2011-09-22

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/786	......薄膜晶体管