Invention Grant
US09564551B2 Method of manufacturing a hybrid emitter all back contact solar cell
有权
制造混合发射器全背接触太阳能电池的方法
- Patent Title: Method of manufacturing a hybrid emitter all back contact solar cell
- Patent Title (中): 制造混合发射器全背接触太阳能电池的方法
-
Application No.: US15067960Application Date: 2016-03-11
-
Publication No.: US09564551B2Publication Date: 2017-02-07
- Inventor: Paul Loscutoff , Seung Rim
- Applicant: SunPower Corporation
- Applicant Address: US CA San Jose
- Assignee: SunPower Corporation
- Current Assignee: SunPower Corporation
- Current Assignee Address: US CA San Jose
- Agency: Okamoto & Benedicto LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/18 ; H01L31/0224 ; H01L31/0368
Abstract:
A method of manufacturing an all back contact solar cell which has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. A second emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The method further includes forming contact holes that allow metal contacts to connect to corresponding emitters.
Public/Granted literature
- US20160204288A1 HYBRID EMITTER ALL BACK CONTACT SOLAR CELL Public/Granted day:2016-07-14
Information query
IPC分类:
