Invention Grant
- Patent Title: Electronic device and method for fabricating the same
- Patent Title (中): 电子器件及其制造方法
-
Application No.: US15075016Application Date: 2016-03-18
-
Publication No.: US09564584B2Publication Date: 2017-02-07
- Inventor: Joon-Seop Sim , Seok-Pyo Song , Jae-Yun Yi
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-Si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-Si
- Agency: Perkins Coie LLP
- Priority: KR10-2013-0097674 20130819
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L45/00 ; H01L27/24 ; G11C11/16 ; G06F3/06 ; G06F12/08 ; G11C5/14
Abstract:
An electronic device includes a semiconductor device that includes: a substrate including a switching element having a buried gate electrode; a buried decoupling capacitor having a line width same as a line width of the buried gate electrode; and a variable resistance element, electrically coupled to the switching element, formed over the substrate.
Public/Granted literature
- US20160225984A1 ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2016-08-04
Information query
