Invention Grant
- Patent Title: Semiconductor device and battery voltage monitoring device
- Patent Title (中): 半导体器件和电池电压监测装置
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Application No.: US14426753Application Date: 2012-09-10
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Publication No.: US09564765B2Publication Date: 2017-02-07
- Inventor: Akiko Fukute , Ryosuke Enomoto , Junko Kimura , Toshitaka Ukai
- Applicant: Akiko Fukute , Ryosuke Enomoto , Junko Kimura , Toshitaka Ukai
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- International Application: PCT/JP2012/073045 WO 20120910
- International Announcement: WO2014/038081 WO 20140313
- Main IPC: H02J7/00
- IPC: H02J7/00 ; G01R31/36 ; B60L3/00 ; B60L11/18 ; H01M10/48 ; H04Q9/00

Abstract:
In battery voltage monitoring ICs for measuring voltages of unit cells of an assembled battery, communication with a system control unit is realized in consideration of fail-safe. The system control unit and the battery voltage monitoring ICs are coupled to each other by a communication path using a daisy chain. Each battery voltage monitoring IC has a placement setting pin designating, by a binary code, a unit cell group to which the IC is coupled, in the unit cell groups. When it is detected that the Hamming distance between the code indicative of coupling to a group of the highest potential or a group of the lowest potential and a state actually set in the placement setting pin is 1, some failure such as line disconnection, short-circuit, or the like in the placement setting pins is detected, and the communication path is interrupted.
Public/Granted literature
- US20150270727A1 SEMICONDUCTOR DEVICE AND BATTERY VOLTAGE MONITORING DEVICE Public/Granted day:2015-09-24
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