Invention Grant
- Patent Title: Port spreading
- Patent Title (中): 港口扩张
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Application No.: US14135693Application Date: 2013-12-20
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Publication No.: US09564903B2Publication Date: 2017-02-07
- Inventor: Paul Simon Hoayun
- Applicant: Qualcomm Technologies International, Ltd.
- Applicant Address: GB Cambridge
- Assignee: QUALCOMM TECHNOLOGIES INTERNATIONAL, LTD.
- Current Assignee: QUALCOMM TECHNOLOGIES INTERNATIONAL, LTD.
- Current Assignee Address: GB Cambridge
- Agency: Procopio, Cory, Hargreaves & Savitch
- Main IPC: H03K19/177
- IPC: H03K19/177 ; H01L23/495 ; H01L25/065 ; H03K19/0175

Abstract:
A semiconductor die having: a logic unit having a plurality of inputs/outputs; a plurality of pads whereby electrical connections can be made to the die; and a multiplexer arranged between the inputs/outputs and the pads, the multiplexer being operable in a first mode in which it maps a first number of the inputs/outputs to a first number of the pads with a first mean spacing between those pads, and a second mode in which it maps a second number of the inputs/outputs to a first number of the pads with a second mean spacing between those pads, wherein the first number is larger than the second number and the first spacing is smaller than the second spacing.
Public/Granted literature
- US20150180477A1 PORT SPREADING Public/Granted day:2015-06-25
Information query
IPC分类: