Invention Grant
US09567626B2 Monolithic device combining CMOS with magnetoresistive sensors 有权
将CMOS与磁阻传感器相结合的单片器件

Monolithic device combining CMOS with magnetoresistive sensors
Abstract:
A monolithic device comprises a substrate. An array of sensing elements is coupled to the substrate, and each sensing element includes a magnetoresistive sensor. An analog electric drive generator is coupled to the substrate, and the electric drive generator produces a sensor-biasing signal that biases the magnetoresistive sensors of the array. An analog multiplexer is coupled to the substrate, and outputs of the array are coupled to inputs of the multiplexer. An analog signal conditioning circuit is coupled to the substrate, wherein at least one output of the multiplexer is coupled to at least one input of the signal conditioning circuit. The monolithic device is fabricated using both complementary metal-oxide semiconductor (i.e., CMOS) technology and thin film technology. For example, the electric drive generator, the multiplexer, and the signal conditioning circuit may be fabricated with CMOS technology, while the magnetoresistive sensors of the array are fabricated with thin film technology.
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