Invention Grant
- Patent Title: Monolithic device combining CMOS with magnetoresistive sensors
- Patent Title (中): 将CMOS与磁阻传感器相结合的单片器件
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Application No.: US14323640Application Date: 2014-07-03
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Publication No.: US09567626B2Publication Date: 2017-02-14
- Inventor: Filipe Arroyo Cardoso , Tiago Miguel Lopes Marta da Costa , José António Henriques Germano , Moisés Simões Piedade
- Applicant: MAGNOMICS, S.A.
- Applicant Address: PT Cantanhede
- Assignee: MAGNOMICS, S.A.
- Current Assignee: MAGNOMICS, S.A.
- Current Assignee Address: PT Cantanhede
- Agency: Husch Blackwell LLP
- Main IPC: G01N27/72
- IPC: G01N27/72 ; C12Q1/68 ; G01N33/543 ; G01N27/74 ; G01R33/09 ; G01N35/00

Abstract:
A monolithic device comprises a substrate. An array of sensing elements is coupled to the substrate, and each sensing element includes a magnetoresistive sensor. An analog electric drive generator is coupled to the substrate, and the electric drive generator produces a sensor-biasing signal that biases the magnetoresistive sensors of the array. An analog multiplexer is coupled to the substrate, and outputs of the array are coupled to inputs of the multiplexer. An analog signal conditioning circuit is coupled to the substrate, wherein at least one output of the multiplexer is coupled to at least one input of the signal conditioning circuit. The monolithic device is fabricated using both complementary metal-oxide semiconductor (i.e., CMOS) technology and thin film technology. For example, the electric drive generator, the multiplexer, and the signal conditioning circuit may be fabricated with CMOS technology, while the magnetoresistive sensors of the array are fabricated with thin film technology.
Public/Granted literature
- US20140323337A1 MONOLITHIC DEVICE COMBINING CMOS WITH MAGNETORESISTIVE SENSORS Public/Granted day:2014-10-30
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